模压成型压力对氧化铟锡(ITO)靶材性能影响研究

doi:10.3969/j.issn.0253-6099.2024.01.029

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摘要以化学共沉淀-煅烧法制备的纳米ITO粉体为原料，通过模压、冷等静压成型，采用常压烧结法制备了ITO靶材，研究了模压成型压力对ITO靶材相对密度、电阻率和晶粒尺寸的影响。结果表明，模压成型压力60 MPa且烧结条件适宜时，制得的ITO靶材相对密度为99.81%、电阻率为1.707×10^-4 Ω·cm、平均晶粒尺寸为7.62 μm。研究结果可为ITO靶材的致密化与大型化生产提供借鉴。

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	姜峰
	谭泽旦
	黄誓成
	方志杰
	陆映东
	覃立仁
	王永清
	曾纪术

关键词 ：模压成型, 氧化铟锡, 导电薄膜, 靶材, 常压烧结, 电阻率, 致密化

Abstract：Nano ITO powders prepared by chemical coprecipitation plus calcination process were used as raw materials to prepare ITO sputtering target by molding and cold isostatic pressing, as well as conventional sintering. The effects of molding pressure on the relative density, resistivity, and grain size of ITO target were investigated. The results show that with the molding pressure of 60 MPa and the appropriate sintering conditions, the prepared ITO target has the relative density of 99.81% and resistivity of 1.707×10^-4 Ω·cm, with an average grain size of 7.62 μm. The research results can provide reference for densification and large-scale production of ITO sputtering targets.

Key words： molding indium tin oxide (ITO) conductive thin film target material conventional sintering electrical resistivity densification

收稿日期: 2023-08-24

基金资助:国家自然科学基金(11864005)；
广西重点研发项目(桂科AB21196007)；
广西科技计划项目(桂科AD20159079)；
柳州市科技计划项目(2020PAAA0608)

通讯作者: 曾纪术(1974—)，男，湖南洞口人，博士，正高级工程师，主要研究方向为材料冶金物理化学、光电材料。E-mail:zengjishu@gxust.edu.cn 方志杰(1979—)，男，广西南宁人，博士，教授，主要研究方向为材料物理、计算材料学。E-mail:nnfang@semi.ac.cn

作者简介: 姜峰(1985—)，男，江西玉山人，博士，高级工程师，主要研究方向为材料加工、粉末冶金技术。E-mail:18277202672@163.com

引用本文:

姜峰, 谭泽旦, 黄誓成, 方志杰, 陆映东, 覃立仁, 王永清, 曾纪术. 模压成型压力对氧化铟锡(ITO)靶材性能影响研究[J]. 矿冶工程, 2024, 44(1): 134-137.
JIANG Feng, TAN Zedan, HUANG Shicheng, FANG Zhijie, LU Yingdong, QIN Liren, WANG Yongqing, ZENG Jishu. Effects of Molding Pressure on Properties of Indium Tin Oxide (ITO) Sputtering Target. Mining and Metallurgical Engineering, 2024, 44(1): 134-137.

[1]    姜    峰,谭泽旦,黄誓成,等. 大尺寸氧化铟锡(ITO)靶材制备研究进展[J]. 广西科学, 2022,29(6):1169-1187.
[2]    SHAO Z, HUANG A, MING C, et al. All-solid-state proton-based tandem structures for fast-switching electrochromic devices[J]. Nature Electronics, 2022,5(1):45-52.
[3]    LIU T, ZHANG W, ZHAI X, et al. Dense ternary-size particles interstitial filling gradation stacking model for preparing high-quality indium tin oxide targets[J]. Chemical Engineering Science, 2022,248:117165.
[4]    陈丽诗,伍美珍,卢兴伟,等. 真空蒸馏-籽晶定向凝固工艺制备半导体用高纯铟[J]. 矿冶工程, 2022,42(1):99-107.
[5]    XU J, YANG Z, ZHANG X, et al. Grain size control in ITO targets and its effect on electrical and optical properties of deposited ITO films[J].Journal of Materials Science: Materials in Electronics, 2014,25:710-716.
[6]    MEI F, QIN K, YUAN T, et al. Effects of oxygen flow velocity on the sintering properties of ITO targets[J]. Journal of Materials Science: Materials in Electronics, 2017,28:14711-14719.
[7]    MEI F, YUAN T, LI R, et al. Improving the densification of indium tin oxide targets via secondary cold isostatic pressing and oxygen exchange treatments[J]. Scripta Materialia, 2018,155:109-113.
[8]    王    科. 氧化铟锡陶瓷的凝胶注模成型工艺研究[D]. 长沙:中南大学, 2014.
[9]    ZHAI X, CHEN Y, MA Y, et al. A new strategy of binary-size particles model for fabricating fine grain, high density and low resistivity ITO target[J]. Ceramics International, 2020,46(9):13660-13668.
[10]    龙神峰. ITO靶材的冷烧结低温制备及性能研究[D]. 桂林:桂林电子科技大学, 2022.
[11]    LIANG F, LIU J. Sintering, microstructure and electricity properties of ITO targets with Bi₂O₃-Nb₂O₅ addition[J]. Ceramics International,2017,43(8):5856-5861.
[12]    刘志宏,谌    伟,李玉虎,等. 成型压力对冷等静压-烧结法制备ITO靶材中孔隙缺陷的影响[J]. 中国有色金属学报, 2015,25(9):2435-2444.
[13]    刘秉宁,赵    旭,孙本双,等. ITO靶材烧结行为研究[J]. 材料科学, 2019,9(8):749-759.
[14]    吕志伟,陈志飞,姚吉升. 纳米ITO粉体的制备及其性能表征[J].矿冶工程, 2004,24(3):70-72.
[15]    Sunde T O L, Einarsrud M A, Grande T. Solid state sintering of nano-crystalline indium tin oxide[J]. Journal of the European Ceramic Society, 2013,33(3):565-574.
[16]    Shinohara N, Okumiya M, Hotta T, et al. Morphological changes in process-related large pores of granular compacted and sintered alumina[J]. Journal of the American Ceramic Society,2000,83(7):1633-1640.
[17]    Slamovich E B, Lange F F. Densification of large pores: I, expriments[J]. Journal of the American Ceramic Society, 1992,75(9):2498-2508.
[18]    Slamovich E B, Lange F F. Densification of large pores: II, driving potentials and kinetics[J]. Journal of the American Ceramic Society, 1993,76(6):1584-1590.
[19]    Deyu G K, Hunka J, Roussel H, et al. Electrical properties of low-temperature processed Sn-doped In2O3 thin films: The role of microstructure and oxygen content and the potential of defect modulation doping[J]. Materials, 2019,12(14):2232.
[20]    Gonzalez G B, Mason T O, Quintana J P, et al. Defect structure studies of bulk and nano-indium-tin oxide[J]. Journal of Applied Physics, 2004,96(7):3912-3920.
[21]    Frischbier M V, Wardenga H F, Weidner M, et al. Influence of dopant species and concentration on grain boundary scattering in degenerately doped In2O3 thin films[J]. Thin Solid Films, 2016,614:62-68.